采用一维方势阱模型对Gash/InxGa1-xAs0.02Sb0.98m量子阱激光器结构的子带跃迁波长与阱宽间的关系进行了计算,并采用能量平衡模型计算了此应变材料体系在生长时的临界厚度.结果表明GaSb/InGaAsSb是制作2～3μm中红外波段量子阱激光器的良好材料体系.在结构设计和材料生长中采用合适的材料组分及阱宽并对应变总量进行控制是十分重要的.
参考文献
| [1] | Werle P. .A review of recent advances in semiconductor laser based gas monitors [Review][J].Spectrochimica acta, Part A. Molecular and biomolecular spectroscopy,1998(2):197-236. |
| [2] | Chiu T H;Tsang W T;Ditzenberger J A et al.Room temperature operation of InGaAsSb/AlGaAsSb double heterostructure laser near 2.2 m prepared by molecular beam epitaxy[J].Applied Physics Letters,1986,49(17):1051-1052. |
| [3] | Grau M.;Lin C.;Amann MC. .Low threshold 2.72 mu m GalnAsSb/AlGaAsSb multiple-quantum-well laser[J].Electronics Letters,2002(25):1678-1679. |
| [4] | Grau M;Lin C;Dier O et al.Room-temperature operation of 3.26 μm GaSh-based type-I lasers with quinternary AIGaInAsSb barriers[J].Applied Physics Letters,2005,87(1-3):241104. |
| [5] | 张永刚,李爱珍,陈建新.InAsP/InGaAsP量子阱的子带跃迁计算[J].半导体光电,1999(05):333-336. |
| [6] | Chaeles Kittel.Introduction to Sohd State Physics[M].New York:Chichester,1986:164. |
| [7] | Polyakov A Y;Milnes A G;Smirnov N B et al.Mechanisms of Fermi level pinning in Schottky barriers on In-GaAsSb and AIGaAsSb[J].Solid-State Electronics,1993,36(10):1371-1373. |
| [8] | Vurgaftman I.;Ram-Mohan LR.;Meyer JR. .Band parameters for III-V compound semiconductors and their alloys [Review][J].Journal of Applied Physics,2001(11 Pt.1):5815-5875. |
| [9] | People R;Bean J C .Calculation of critical layer thickness versus lattice mismatch for GeSi/Si strained-layer hererostructures[J].Applied Physics Letters,1985,47(03):322-324. |
| [10] | Fritz I L;Picraux S T;Dawson L R et al.Dependence of critical layer thickness on strain for InGaAs/ GaAs strained-layer superlattice[J].Applied Physics Letters,1985,46(10):967-969. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%