采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜氮化反应组装GaN薄膜,研究硅基扩镓时间对GaN薄膜晶体质量的影响.利用红外透射谱(FHR)、X射线衍射(XRD)、扫描电镜(SEM)、光电能谱(XPS)和荧光光谱(PL)对生成的GaN薄膜进行组分、结构、表面形貌和发光特性分析.测试结果表明:采用此方法得到六方纤锌矿结构的GaN晶体膜.同时显示:在相同的氮化温度和时间下,随着硅基扩镓时间的增加,薄膜的晶体质量和发光特性得到明显提高.但当硅基扩镓时间进一步增加时,薄膜的晶体质量和发光特性却有所降低.较适宜的硅基扩镓时间为40min.
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