通过分析SOI基GaN生长的机制,结合热膨胀系数不同而产生应力的原理,利用弹性力学原理,我们对已有的计算多层结构应力的模型进行了简化修改,得到了能够方便的计算SOI基GaN生长过程中的热应力分布的模型.对具体样品的模拟计算表明,GaN层中张应力的值约为0.5GPa,曲率半径为9.1m.SOI结构中SiO2埋层以及顶层硅厚度变化对GaN层的热应力影响很小,但是对SOI自身各层中应力影响较大.通过合理简化模型,我们分析了蓝宝石基以及SiC基GaN生长中的热应力的分布问题.
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