选取极薄Ti02作为过渡层,采用脉冲激光沉积法分别在Si(100)和Pt(111)/Ti/SiO2/Si(100)基底上制备了Bao.6Sro.4TiO3(BST)薄膜,研究过渡层对BST薄膜微结构及电学性质的影响.发现厚度20纳米以内的锐钛矿相结晶TiO2过渡层可使BST薄膜由无规则取向转变为(111)择优取向,而非晶和较厚TiO2过渡层对BST薄膜的取向无影响.结晶的TiO2过渡层也使薄膜的表面颗粒变细.还研究了不同厚度TiO2对BST薄膜电学性质的影响,结果表明BST薄膜在Pt(111)底电极上加入极薄的结晶TiO2过渡层后电学性质有明显改善,薄膜的介电常数和可调谐度提高,而介电损耗降低.加入膜厚约5nm的TiO2过渡层后,测试频率为10 kHz时薄膜相应介电常数、介电损耗及可调谐度分别为513、0.053和36.7%.
参考文献
| [1] | Ezhilvalavan S;Tseng T Y .progress in the developments of(Ba,Sr)TiO3(BST)thin-filin-g for Gigabit era DRAMs[J].Mat Cbem Phys,2000,65:227-248. |
| [2] | Yang G;C.u H S;Zhu J et al.The fabrication and characteristics of(Bao.5 Sr0.5)Ti03 thin-film-A prepared by pulsed laser deposition[J].Journal of Crystal Growth,2002,242:172-176. |
| [3] | Moon S E;Kim E K;Kwak M H et al.Orientation dependent microwave dielectric properties of ferroeleclric Ba1-xSrxTiO3 thin-filing[J].Appl Pbys Lett,2003,83:2166-2168. |
| [4] | Fardin E A;Holland A S;C.horbani K et al.Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sopphire:Effect of film thickness On main and dielectric pllgperties[J].Applied Physics Letters,2006,89:182907(1-1829073). |
| [5] | Wang Y;Liu B;Wei F et al.Fabrication and electrical properties of (111)textured Bao.6Sro.4TiO3 film on platinized Si subatrate[J].Applied Physics Letters,2007,90:042905(1-0429053). |
| [6] | Zhu W C;Cheng J R;Yu S W et al.Enhanced tunable properties of Ba0.6Sr0.4TiO3 thin films grown on Pt/Ti/SiO2/Si substrates using MgO buffer layers[J].Applied Physics Letters,2007,90:032907(1-0329073). |
| [7] | Yi WC.;Kalkur TS.;Philofsky E.;Kammerdiner L. .Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown on thin Bi layer-coated Pt(111)/Ti/SiO2/Si substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):307-310. |
| [8] | Yoon K H;Sohn J H;lee B D et al.Effect of LaNiO3 interlayer on dielectric properties of Ba0.55Sr0.5TiO3 thin films deposited on differently oriented Pt electrodes[J].Applied Physics Letters,2002,81:5012-5014. |
| [9] | Yamada T;Muralt P;Sherman VO et al.Epitaxial growth of Ba0.3 Sr0.7TiO3 thin films on A12O3(0001)using uhrathin TiN layer as a sacrificial template[J].Applied Physics Letters,2007,90:142911(1-1429113). |
| [10] | Lu J W;Schmidt S;Ok Y W et al.Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electtodes[J].Journal of Applied Physics,2005,98:054101(1-0541019). |
| [11] | Kim H S;Kim H G;Kim I D et al.High-tunability and low-microwave-loss Bao.6Sr0.4TiO3 thin films grown on high-resistivity Si substmtes using TiO2 buffer layers[J].Applied Physics Letters,2005,87:212903(1-2129033). |
| [12] | Muralt P.;Sagalowicz L.;Hiboux S.;Scalese S.;Naumovic D. Agostino RG.;Xanthopoulos N.;Mathieu HJ.;Patthey L.;Bullock EL.;Maeder T. .Texture control of PbTiO3 and Pb(Zr,Ti)O-3 thin films with TiO2 seeding[J].Journal of Applied Physics,1998(7):3835-3841. |
| [13] | Bouregba R.;Vilquin B.;Murray H.;Poullain G. .Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2000(9):1381-1390. |
| [14] | Muralt P .Texture control and seeded uuclcation of nanosize structures of ferroelectric thin filma[J].Journal of Applied Physics,2006,100:051605(1-0516011). |
| [15] | Chen L L;Shen M R .Dielectric properties and I-V characteristics of(Pb0.4Sr0.6)TiO3 thin films improved by TiO2 buffer layers[J].Journal of Sol-Gel Science and Technology,2007,42:299-304. |
| [16] | Kato K;Suzuki K;TanaKa k et al.Effect of amorphous TiO2 bufferlayer onthe phase fornmtionof CaBi4Ti4O15 ferroelectric thin films[J].Applied Physics A:Materials Science and Processing,2004,81(04):861-864. |
| [17] | Higuchi T;Nakamura M;Haehisu Y et al.Ferroelectric Properties of Bi4Ti3O12 Thin Films Prepared on TiO2 Anatase Layer[J].Japanese Journal of Applied Physics,2004,43:6585-6589. |
| [18] | Busani T;Devine RAB .Dielectric and infrared properties of TiO2 films containing anatase and rutile[J].Semiconductor Science and Technology,2005(8):870-875. |
| [19] | Aoki K;Fukuda Y .Effects of titanium buffer layer on lead-zireonate-titanate crystallization processes in solgel deposition technique[J].Japanese Journal of Applied Physics,1995,Part 1.34:192-195. |
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