采用单晶位错研究的热弹性模型,计算模拟了垂直布里奇曼法碲锌镉单晶生长过程中的热应力场,研究了炉膛温度梯度对晶体内热应力的影响.计算结果表明:径向上晶体边缘与坩埚壁接触位置处的热应力远大干晶体中心处的热应力;轴向上晶体底部位置的热应力远大于晶体顶部的热应力.在晶体底部边缘与坩埚接触的位置出现最大热应力值σmax.当炉膛温度梯度从5K/cm增加到20K/cm,晶体内的热应力显著提高,σmax从41.83MPa增加到79.88MPa;当温度梯度超过20K/cm进一步增加时,晶体内的热应力增加很少,σmax仅增加了约5.3%.
参考文献
| [1] | Min Nai -ben.Physical Fundamentals of Crystal Growth[M].Shanghai,Shanghai Scientific and Technical Press,1982:453-455. |
| [2] | Jordan A S;Caruso R;Von Neida A R .A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals[J].Bell System Technical Journal,1980,59(04):593-637. |
| [3] | Duseaux M .Temperature Profile and Thermal Stress Calculations in GaAs Crystals Growing from the Melt[J].Journal of Crystal Growth,1983,61:576-590. |
| [4] | Motakef S .Thermoelastic Analysis of GaAs in LEC Growth Configuration I.Effect of Liquid Encapsulation on Thermal Stresses[J].Journal of Crystal Growth,1987,80:37-50. |
| [5] | Meduoye G O;Bacon D J;Evans K E .Computer Modeling of Temperature and Stress Distributions in LEC -grown GaAs Crystals[J].Journal of Crystal Growth,1991,108:627-636. |
| [6] | Huang C E;Elwell D;Feigelson R S .Computation of stress in Bridgman crystals[J].Journal of Crystal Growth,1984,69:275-28O. |
| [7] | Parfeniuk C;Weinberg F;Samarasekera ⅠⅤ .Measured critical resolved shear stress and calculated temperature andstress field during growth of CdZnTe[J].Journal of Crystal Growth,1992,119:261-270. |
| [8] | Rosch W;Carlson F .Computed Stress Fields in GaAs During Vertical Bridgman Growth[J].Journal of Crystal Growth,1991,109:75-81. |
| [9] | C.K. Chao;S.Y. Hung .Stress analysis in the vertical Bridgman growth with the modified thermal boundary condition[J].Journal of Crystal Growth,2003(1/2):107-115. |
| [10] | Ma R H;Zhang H;Larson Jr D J et al.Dynamics of melt-crystal interface and thermal stresses in rotational Bridgrnan crystal growth process[J].Journal of Crystal Growth,2004,266:216-223. |
| [11] | 刘春梅,李明伟,陈怀杰.LEC法GaAs单晶生长中热应力分布研究[J].材料科学与工程学报,2005(04):546-549. |
| [12] | Mingwei Li;Chunmei Liu;Pingqing Wang .Numerical simulation of LEC growth of InP crystal with an axial magnetic field[J].International Journal of Heat and Mass Transfer,2006(9/10):1738-1746. |
| [13] | 张国栋,刘俊成,李蛟.坩埚内壁碳膜对Bridgman法生长CdZnTe晶体热应力的影响[J].金属学报,2007(10):1071-1076. |
| [14] | C.Martinez-Tomas;V.Munoz .CdTe crystal growth process by the Bridgman method: numerical simulation[J].Journal of Crystal Growth,2001(3):435-451. |
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