对AlGaN/GaN HEMT栅槽低损伤刻蚀技术进行研究,通过加入小流量的具有钝化缓冲作用的C2H4,对Cl2/Ar/C2H4的工艺条件进行了优化,有效地降低了栅槽刻蚀造成的AlGaN表面损伤和器件退化,同时防止反应生成物淀积在栅槽表面,改善了肖特基结特性,提高了栅极调控能力,实现凹栅槽的低损伤刻蚀.
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