提出非均匀指间距结构功率SiGe HBTs的版图设计用以改善热稳定性.模拟和实验结果均表明,与传统的均匀指间距结构相比,非均匀指间距结构HBT的峰值结温和温度分布非均匀性均得到显著改善.上述改善归功于非均匀指间距结构HBT中心指间距的增加,从而有效阻止热流由外侧指流向中心指处.此外,与均匀指间距结构器件相比,其热阻改善13.71%,热退化功率水平提高22.8%.因此,模拟和实验均证明采用非均匀指间距结构HBT的版图设计可有效改善功率HBTs热稳定性.
The layout design of a multi-finger power SiGe HBT with non--uniform finger spacing is pro-posed to improve the thermal stability.Compared with the traditional HBT with uniform finger spacing,both simulated and experimental results shown that the peak temperature and the non-uniformitv of the temperature profile in the HBT with non-unifotin finger spacing are improved markedly.which is as-cribed to the increasing the spacing between fingers,and hence suppressing the heat flow from adjacent fingers to the center finger effectively.Furthermore,the thermal resistance is improved by 13.69% and the power level for thermal regression is increased by 22.8% compared with that of the uniform finger spacing device.Therefore,both simulation and experiment prove that the layout design of HBTs with non-uniform finger spacing is very useful for improving the thermal stability of power HBTs.
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