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本文主要研究了在常态(常温、常压等)条件下,利用金属催化化学腐蚀方法在硅片表面上大面积制备排列整齐、取向一致的硅纳米线阵列.同时,出于对后续制作硅纳米线传感器考虑,利用微电子标准加工工艺,以氮化硅做掩膜,通过选择合适的实验参数,在硅片表面选择性生长纳米线阵列,得到图形化的硅纳米线阵列.

Preparation of large area aligned identical silicon nanowires arrays by the metal catalyzed chemical etching method under normal conditions(room temperature,1 atm)had been studied in this paper.And,in consideration of further silicon nanowires sensors,using a standard microelectronic process technique,silicon nitride as mask,selective silicon nanowires on the silicon substrate were grown.Finally,patterned silicon nanowires arrays were gotten.

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