用磁控溅射法制备了Al/Sb多层薄膜,通过X射线衍射(XRD)、X射线荧光(XRF)、Hall效应、暗电导率温度关系及透过谱的测试研究了退火前后薄膜的结构和性质.XRD测试结果表明,刚沉积的薄膜只有Sb的结晶相,而Al则以非晶态形式存在,500℃退火后化合为AlSb多晶,且沿(111)择优取向.Hall效应测试、电导激活能及光能隙的计算结果表明,所制备的AlSb多晶薄膜为P型材料,且载流子浓度为10~(19) cm~(-3),光能隙为1.64eV,电导率随温度的变化可分为两个过程,在30℃到110℃,薄膜的电导率随温度的增加而缓慢增加,而在110℃到260℃间增加明显,升温电导激活能为0. 11eV和0.01eV,这与AlSb多晶薄膜在升温过程中的结构变化有关.将制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳电池器件中,已观察到明显的光伏效应,说明用这种方法制备的AlSb多晶薄膜适于作太阳电池的吸收层.
The Al/Sb multi-layer thin films were prepared by magnetron sputtering method. The structural, optical and electrical properties of the films before and after annealing have been studied with X-ray diffraction (XRD), X-ray fluorescence (XRF), Hall effect, the temperature dependence of the film dark conductivity and UV-Vis transmission spectra. The XRD results showed that only the Sb polycrystalline peaks were observed in as-deposited films while Al existed in amorphous state. After annealing at 500℃, the films showed A1Sb peaks with (111) preferred orientation, which suggested that Al and Sb atoms have combined to form AlSb by interdiffusion. The measurement results of Hall effect indicated that the prepared AlSb films were p-type semiconductors with the carrier concentration of 10~(19)cm~(-3). The energy band-gap of the AlSb films obtained from UV – Vis data were about 1. 64eV. The temperature dependence of the film conductivity showed two stages. In the heating process from 30℃ to 110℃ , the conductivity of the film increased slowly with the temperature. In the stage from 110℃ to 260℃ , the film conductivity increased more quickly with the temperature. The calculated conductivity activation energy was 0. 01eV and 0. 11eV, respectively. This result had close relationship with the structural changes of the multi-layer Al/Sb films in the heating process. The obvious photovoltaic effect has been observed in TCO/CdS/AlSb/ZnTe:Cu/Au devices, which demonstrated the potential of AlSb as the absorber layer in solar cells.
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