采用溶胶-凝胶方法在FTO/glass底电极上制备了BiFeO_3/Bi_4Ti_3O_(12)和Bi_4Ti_3O_(12)/BiFeO_3多层薄膜.研究了室温下薄膜的结构,铁电性质和介电性质,并将其与纯的BiFeO_3薄膜的性质进行了比较.从薄膜的XRD模式中可以观察到共存的BiFeO_3相和Bi_4Ti_3O_(12)相.通过电滞回线测量可以看出,相对于纯的BiFeO_3薄膜,BiFeO_3/Bi_4Ti_3O_(12)和Bi_4T_(13)O_(12)/BiFeO_3多层薄膜能够承受更高的测试电场而获得充分极化,从而表现出较强的铁电性,在450 kV/cm测试电场下,薄膜的剩余极化强度分别为37 μLC/cm~2和23 μC/cm~2.
BiFeO_3/Bi_4Ti_3O_(12) multilayer film was prepared on FTO/glass bottom electrodes by sol-gel process. Structure, ferroelectric and Dielectric properties at room temperature were studied by comparing with pure BiFeO_3 film. BiFeO_3 and Bi_4Ti_3O_(12) phase can be identified from the XRD pattern. Comparing with pure BiFeO_3 film, the BiFeO_3/Bi_4Ti_3O_(12) and Bi_4Ti_3O_(12)/BiFeO_3 multilayer film can endure higher applied field and thus getting fully polarization and show more intense ferroelectricity, Under an applied field of 450 kV/cm , the remnant polarizations are 37 μC/cm~2 and 23 μC/cm~2, respectively.
参考文献
[1] | J Wang;J B Neaton;H Zheng et al.Epitaxial BiFeO_3 Multiferroic Tlun Film Heterostructures[J].Science,2003,299:1719-1722. |
[2] | Palkar V R;John J;Pinto R et al.Observation of saturated polarization and dielectric anomaly in magnetoelectric BiFeO_3 thin films[J].Applied Physics Letters,2002,80:1628-1631. |
[3] | Rao B U M;Sriruvasan C .Effects of lugh-temperature annealing on amorphousBiFeO_3 with nonrnagnetic substitutions[J].Applied Physics Letters,1991,58(21):2441. |
[4] | K Ueda;H Tabata;T Kawai .Coexistence of ferroelectricity and ferromagnetism in BiFeO_3-BaTiO_3 thin fdms at room temperature[J].Applied Physics Letters,1999,75:555. |
[5] | K Y Yun;M Noda;M Okuyama .PRominent ferroelectricity of BiFeO_3 thin films prepared by pulsed-laser deposition[J].Applied Physics Letters,2003,83:3981. |
[6] | Iakovlev S;Solterbeck CH;Kuhnke M;Es-Souni M .Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization[J].Journal of Applied Physics,2005(9):4901-1-4901-6-0. |
[7] | Wang Y P;Zhou L;ZhangM F et al.Room temperature saturated ferroelectric polarization in BiFeO_3 ceranucs synthesized by rap id liquid phase sinterig[J].Applied Physics Letters,2004,84:10. |
[8] | Wang D H;Goh W C;Ning M;C K Ong .Effect of Ba doping on magnetic,ferroelectric,and magnetoelectric properties in mutiferroic BiFeO_3 at room temperature[J].Applied Physics Letters,2006,88:212907-212909. |
[9] | Lee Y H;Wu J M;Lai C H .Influence of La doping in multiferroic properties of BiFeO_3 thin films[J].Applied Physics Letters,2006,88:042903-042905. |
[10] | Wang Y;Nan C W .Enhanced ferroelectricity in Tidoped multiferroic BiFeO_3 thin films[J].Applied Physics Letters,2006,89:052903-052905. |
[11] | Singh S K;Ishiwara H;Maruyama K .Room temperature ferroelectric properties of Mn-substituted BiFeO_3 thin films deposited on Pt electrodes using chemical solution deposition[J].Applied Physics Letters,2006,88:262908-262911. |
[12] | Kim J K;Kim S S;Kim W J .Enhanced ferroelect:ric properties of Cr-doped BiFeO_3 thin films grown by chemical solution deposition[J].Applied Physics Letters,2006,88:132901-132903. |
[13] | Xiuzhang Wang;Hongri Liu;Bowu Yan .Enhanced ferroelectric properties of Ce-substituted BiFeO3 thin films prepared by sol-gel process[J].Journal of Sol-Gel Science and Technology,2008(2):124-127. |
[14] | Yajun Qi;Chaojing Lu;Qiaofeng Zhang et al.Improved ferroelectric and Ieakage properties in sol-gel derived BiFeO_3/Bi3.15Nd0.85Ti3O12 bi-layers deposited on Pt/Ti/SiO_2/Si[J].Journal of Physics D:Applied Physics,2008,41:065407. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%