本文结合功能材料Al_2O_3和BCB(苯并环丁烯树脂)的特点,创新性地提出了Si/Al_2O_3/BCB多层薄膜复合结构的衬底,利用Al_2O_3高介电常数的优点和BCB薄膜工艺制备厚度的灵活性实现了低传输损耗.本研究采用与CMOS相兼容的半导体制造工艺在三种不同衬底(Si、Si/BCB和Si/Al_2O_3/BCB)上制作了CPW结构的传输线,通过仿真、测量、比较和分析其传输损耗特性得出Si/Al_2O_3/BCB多层薄膜复合结构衬底有效地降低了普通硅衬底的高频损耗(20GHz时CPW传输线的损耗为1. 18dB/mm),实现了微波毫米波电路低损耗传输线,具有广泛的应用前景.
This paper reports the measurement of a new Si/Al_2O_3/BCB multilayer thin-film substrate based on the high dielectric constant of Al_2O_3 thin film and the thick-film of BCB. CPW structure transmission lines were fabricated on three different substrates(Si, Si/BCB and Si/Al_2O_3/BCB) by the technique compatible with the CMOS semiconductor fabrication process. The simulated and measured results showed that Si/Al_2O_3/BCB multilayer substrate could effectively reduce the transmission line loss on normal silicon based substrate (loss for CPW is 1.18dB/mm at 20GHz), which realized the low transmission loss of RF and Microwave circuits, and demonstrated wide application potentials.
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