采用反应直流磁控溅射法在Al_2O_3陶瓷基片上制备TaN薄膜,研究了氮流量(N_2/(N_2+ Ar))对TaN薄膜微结构及性能的影响.结果表明,随氮流量的增大,TaN薄膜的氮含量、电阻率、方阻以及TCR的绝对值逐渐增大,而沉积速率逐渐降低.当N_2流量较低(2%～4%)时,TaN薄膜中主要含有电阻率和TCR绝对值较低的六方Ta_2N相(hcp),薄膜的电阻率在344μΩ·cm到412μΩ·cm范围内,薄膜的TCR绝对值约为几十ppm/℃.当氮气流量较高(5%～6%)时,薄膜中Ta_2N相消失,薄膜中主要含有TCR绝对值较大的体心四方结构(bct)的TaN和四方结构(bct)的Ta_3N_5相,薄膜的电阻率在940μΩ·cm到1030μΩ·cm范围内,薄膜的TCR绝对值约为几百ppm/℃.
TaN thin films were deposited on Al_2O_3 substrates by dc reactive magnetron sputtering. The influences of nitrogen partial flux(N_2/(N_2 +Ar)) on the micro-structures and the properties of the samples were investigated in detail. The results show that the nitrogen content, resistivity, sheet resistance and the absolute TCR of the TaN films are increased gradually with the increase of the nitrogen partial flux. However, the deposition rate of the sample is decreased with the increase of the nitrogen partial flux. At lower nitrogen partial flux (2%～4%),the main crystalline phase existing in the TaN films is Ta_2N(hcp) which possesses lower resistivity and absolute TCR. The resistivity of the samples is about in the range from 344μΩ·cm,and the absolute TCR of the samples is about tens ppm/℃. However, at higher nitrogen partial flux (5%～6%),the main crystalline phases existing in the TaN films are TaN(bct) and Ta_3N_5(bct), which possesses higher resistivity and absolute TCR. The resistivi ty of the samples ranges between 940μΩ·cm and 1030μΩ·cm, and the absolute TCR of the samples is about hundreds ppm/℃.
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