应用中频反应磁控溅射设备制备了Al2O3:Ce3+的非晶薄膜.在溅射时靶电压随氧气分压比的增加而减小,而当氧分压比增大时靶电压沿另一条路径变化,即呈现迟滞回线现象.通过控制氧分压比改变Al2O3:Ce3+薄膜的发光性质.经光致发光检测,薄膜的光致发光谱是在374nm附近的非对称波峰,它来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的.当氧分压比增加时薄膜的发光强度增加,在氧分压比为15%是发光强度最大,其后随氧分压比增大发光强度有减小趋势.薄膜的厚度随氧分压比的增加而呈减小的趋势.X射线衍射(XRD)检测表明所制备透明薄膜为非晶态.扫描电镜检测(SEM)显示,随着氧分压的增加非晶薄膜表面趋于致密平滑.发射纯蓝光的Al2O3:Ce3+非晶薄膜在平板显示等领域有着广泛的潜在应用前景.
A aluminum oxide film doped with Ce have been deposited by the medium frequency reactive magnetron sputtering technique.Hysteresis observed in the relationship between the sputtering voltage and the oxygen flow rate was studied.The photoluminescence emission from these films show unsymmetrical peaks at 374 nm which are associated with 5d to 4f transitions of Ce.The presence of Ce as well as the stoichiometry of these films have been determined by energy dispersive x-ray spectroscope(EDS)measurements.The overall intensity of the light emission increases initially with oxygen paaiM pressure ratio going through a maximum and then decreasing at oxygen partial pressure ratio of 15%.The thickness of the films has tend of decrease and the surface morphology being dense and smoothness,with increasing oxygen partial pressure ratio.The crystalline structure of the sample was analysed by x-ray diffractometry(XRD).This luminescence feature has an advantage for display techniques,which require a purer blue emission.
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