在Si单晶表面真空沉积有机半导体材料苝四甲酸二酐(PTCDA)可形成有机/无机异质结.利用铟锡氧化物(ITO)沉积在PTCD表面作为光的入射窗口,在其表面溅射Al/Ni接触电极,在氢气保护气氛中经350℃,3分钟合金化,其比接触电阻Ps达5.2×10-5·cm2.利用α台阶仪,原子力显微镜,紫外可见分光光度计及Ⅹ射线衍射仪,对其形成良好低阻欧姆电极的工艺条件及表面和界面进行了分析讨论.
Si single crystal surface in vacuum deposition of organic semiconductor materials 3,4,9,10perylenetetracarboxylic dianhydride(PTCDA)can form organic/inorganic heterojunction.The use of indium tin oxide(ITO)deposited on the surface as PTCDA incident light window,on its surface sputtering Al/Ni contact electrode,protection in an atmosphere of hydrogen by 350℃,3 minutes alloying,its specific contact resistance ρs=5.2×10-5·cm.Use α level instrument,atomic force microscopy,UV-visible spectmphotometer and x-ray diffractometer,it's a good low resistance ohmic electrodes formation process conditions and surface and interface are analyzed and discussed.
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