用sol-gel方法在Pt(111)/Ti/SiO2/Si(100)衬底上制备了具有LaNiO3(LNO)缓冲层的(Pb0.5Sr0.5)TiO3(PSrT50)/LNO/Pt异质结构铁电薄膜.X射线分析发现PSrT50薄膜在(100)方向高度取向,同时扫描电镜图像显示薄膜结构致密、表面平整.通过和直接在Pt上制备的、相同厚度的PSrT50薄膜比较,PSrT50/LNO/Pt结构薄膜在室温下具有更大的剩余极化(Pr=4.5 μC/cm2)和更高的介电常数(εr=850).同时,漏电流机理分析表明,PSrT50/LNO/Pt结构薄膜在低电场作用下呈现Pool-Frenkel发射效应,在高电场作用下则表现为空间电荷限制电流.
参考文献
| [1] | 马建华,孙璟兰,孟祥建,林铁,石富文,褚君浩.SrTiO3金属-绝缘体-半导体结构的介电与界面特性[J].物理学报,2005(03):1390-1395. |
| [2] | Kyoung-T. Kim;Chang-I. Kim .Structure and dielectrical properties of (Pb,Sr)TiO_3 thin films for tunable microwave device[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(12):544-547. |
| [3] | H.Huang;X.Yao;X Q Wu .Ferroelectrie PhTiO3 thin films prepared by electrostatic spray deposition (ESD)[J].Microelectronic Engineering,2003,66:688-694. |
| [4] | Hyun Jin Chung;Suk Jin Chung;Jin Hong Kim;Seong Ihl Woo .The effect of post-annealing on the electrical properties of (Pb,Sr)TiO{sub}3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):213-218. |
| [5] | D.H.Kang;S.Y.Lee .Effects of composition and stacking sequence on dielectric properties of the multilayered (Pb,Sr)TiO3 thin films for tunable device application[J].Journal of the European Ceramic Society,2006,261:2169-2173. |
| [6] | O.Bernard;M.Andrieux;S.Poissonnet .Mechanical Behavior of Ferroelectric Films on Perovskite Substrate[J].Journal of the European Ceramic Society,2004,24(05):1763-1773. |
| [7] | Yu.A.Boikov;Z G Ivanov;A L Vasiliev et al.Epitaxial heterostructures YBa2Cu3O7/KTaO3 for microwave applications[J].Applied Physics Letters,1995,67(18):2708-2710. |
| [8] | Il-Doo Kim;Kwi-Young Han;Ho-Gi Kim .Characterization of LSCO/Ir and LSCO/Ru Structure as Diffusion Barrier Layers for Highly Integrated Memory Devices[J].Electrochemical and solid-state letters,2004(2):F11-F14. |
| [9] | FL Ramesh;H.Gilchrist;T.Sands et al.Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-CO-O heterostructures on silicon via template growth[J].Applied Physics Letters,1993,63(26):3592-3594. |
| [10] | H. Suzuki;Y. Miwa;T. Naoe .Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition[J].Journal of the European Ceramic Society,2006(10/11):1953-1956. |
| [11] | G.S.Wang;D Remiens.The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0 53Ti0 4703 films[J].Journal of Crystal Growth,2005(284):184-189. |
| [12] | 王根水,赵强,孟祥建,石富文,孙璟兰,褚君浩.LaNiO3/PbZr0.4 Ti0.6 O3/LaNiO3的疲劳特性研究[J].压电与声光,2006(01):72-75. |
| [13] | Bao DH.;Yao X.;Wakiya N.;Shinozaki K.;Mizutani N. .Structural, dielectric, and ferroelectric properties of PbTiO3 thin films by a simple sol-gel technique[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(2/3):269-274. |
| [14] | X.G. Tang;H.F. Xiong;L.L. Jiang;H.L.W. Chan .Dielectric properties and high tunability of (100)- and (110)-oriented (Ba_(0.5)Sr_(0.5))TiO_3 thin films prepared by pulsed laser deposition[J].Journal of Crystal Growth,2005(4):613-619. |
| [15] | Meng XJ.;Yu J.;Ye HJ.;Guo SL.;Chu JH.;Sun JL. .Preparation of highly (100)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/2):68-70. |
| [16] | Kengo Ueno;Toshiaki Yamaguchi;Wataru Sakamoto;Toshinobu Yogo;Koichi Kikuta;Shin-ichi Hirano .Orientation control of chemical solution deposited LaNiO_3 thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):78-81. |
| [17] | S.H.Leal;F M Pontes.Ferroelectric phase transition in Pb0 60Sr0 04TiO3 thin films[J].Materials Chemistry and Physics,2004(87):353-356. |
| [18] | Shou-Yi Kuo;Chung-Ting Li;Wen-Feng Hsieh .Decreasing giant splitting of longitudinal and transverse optical phonons in Pb_(x)Sr_(1-x)TiO_(3) due to Pb covalency[J].Applied physics letters,2002(16):3019-3021. |
| [19] | D.H.Kang;S Y Lee.Effects of composition and stacking sequence on dielectric properties of the multilayered (Pb,St)TiO3 thin films for tunable device application[J].Journal of the European Ceramic Society,2006(26):2169-2173. |
| [20] | S.Y.Kuo;C T Li;W F Hsieh.Decreasing giant splitting of longitudinal and transverse optical phonons in PbxSr1-xTiO3 due to Pb covalency[J].Applied Physics Letters,2002(81):30,19-3021. |
| [21] | Kengo Ueno;Toshiaki Yamaguchi;Wataru Sakamoto;Toshinobu Yogo;Koichi Kikuta;Shin-ichi Hirano .Orientation control of chemical solution deposited LaNiO_3 thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):78-81. |
| [22] | 李建康,姚熹.不同衬底上Pb（Zr0.52Ti0.48）O3择优取向铁电薄膜的制备和研究[J].物理学报,2005(06):2938-2944. |
| [23] | Meng XJ.;Li B.;Guo SL.;Ye HJ.;Chu JH.;Cheng JG. .Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique[J].Journal of Crystal Growth,2000(1/4):541-545. |
| [24] | 王根水,石富文,孙璟兰,孟祥建,戴宁,褚君浩.LaNiO3缓冲层对Pb（Zr,Ti）O3铁电薄膜的影响[J].功能材料与器件学报,2004(03):294-298. |
| [25] | 程铁栋,唐新桂,匡淑娟,熊惠芳,刘秋香,蒋艳平.（Pb,La）TiO3/LaNiO3异质结薄膜的漏电流特征[J].稀有金属材料与工程,2008(z2):233-236. |
| [26] | 杨艳,张树人,刘敬松,张洪伟,刘蒙.铁电薄膜漏电流研究现状[J].绝缘材料,2006(04):51-55. |
| [27] | 沈效农;王弘 .铁电薄膜导电过程与机理[J].功能材料,1996,27(04):295-300. |
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