本文针对CMOS电路关键技术的发展,首先分析了应变硅技术包含的四个领域,总结得出从客观和主观两个方面,应变技术已成为微电子发展的关键技术;侧重于应变硅中应变量的表征介绍了常用的方法:Raman光谱频移法、会聚束电子衍射法、四点应变量测法、ANSYS模拟分析法,为应变硅技术在CMOS技术中的应用提供科学参考.
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