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采用水热法制备了不同比例Ni掺杂ZnO晶体.XRD结果表明,Ni掺杂浓度较低时,生成置换型氧化锌镍固溶体,当Ni掺杂浓度增加到5%时,Ni2+过饱和,析出部分立方NiO.FT-IR结果显示:当水热温度达到160℃时,粒子运动速率越快,晶格空隙越开放,Ni2+替代Zn2+形成固溶体的数目增多,掺杂ZnO在906cm-1附近出现了一个新的吸收带,并且随着掺杂浓度的增加,吸收带变强变宽;提高前驱物的pH值,实际进入ZnO晶格Ni2+浓度越高,造成的晶格缺陷越多,从而使吸收带出现了蓝移,表现出良好的红外吸收特性.

参考文献

[1] H. Kim;C. M. Gilmore;J. S. Horwitz .Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices[J].Applied physics letters,2000(3):259-261.
[2] Srikant V.;Clarke DR.;Sergo V. .EPITAXIAL ALUMINUM-DOPED ZINC OXIDE THIN FILMS ON SAPPHIRE .2. DEFECT EQUILIBRIA AND ELECTRICAL PROPERTIES[J].Journal of the American Ceramic Society,1995(7):1935-1939.
[3] Kwang Joo Kim;Young Ran Park .Large and abrupt optical band gap variation in In-doped ZnO[J].Applied physics letters,2001(4):475-477.
[4] Bougrine A.;El Hichou A.;Addou M.;Ebothe J.;Kachouane A.;Troyon M. .Structural, optical and cathodoluminescence characteristics of undoped and tin-doped ZnO thin films prepared by spray pyrolysis[J].Materials Chemistry and Physics,2003(2):438-445.
[5] J M Bian;X M Li;X D Gao et al.Desposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl Plays Lett,2004,84(04):541-543.
[6] 宁光辉,赵晓鹏.Zn1-xMgxO的溶胶凝胶法合成及其特性研究[J].功能材料,2004(03):328-329,332.
[7] Roy V A L;Djuri I A B;Liu H et al.Magnetic properties of Mn doped ZnO tetrapod structures[J].Applied Physics Letters,2004,84(05):756-758.
[8] D. P. Norton;S. J. Pearton;A. F. Hebard;N. Theodoropoulou;L. A. Boatner;R. G. Wilson .Ferromagnetism in Mn-implanted ZnO:Sn single crystals[J].Applied physics letters,2003(2):239-241.
[9] Schwartz DA;Kittilstved KR;Gamelin DR .Above-room-temperature ferromagnetic Ni2+-doped ZnO thin films prepared from colloidal diluted magnetic semiconductor quantum dots[J].Applied physics letters,2004(8):1395-1397.
[10] Dana A S;Daniel G R.A simple room-temperature preparation of colloidal ZnO quantum dots from homogenous polar aprotic Solutions[J].Proceedings of Spie-the International Society for Optical Engineering,2003(01):5224.
[11] Huang GJ;Wang JB;Zhong XL;Zhou GC;Yan HL .Synthesis, structure, and room-temperature ferromagnetism of Ni-doped ZnO nanoparticles[J].Journal of Materials Science,2007(15):6464-6468.
[12] 赵瑞斌;候登录;叶小娟 等.溶胶-凝胶法制备Ni掺杂ZnO的结构、光学和磁学性质[J].功能材料,2007,4(05):14.
[13] 韦志仁,李军,刘超,林琳,郑一博,葛世艳,张华伟,窦军红.水热法合成Zn1-xNixO稀磁半导体[J].人工晶体学报,2006(02):244-247,223.
[14] 苗鸿雁,李慧勤,谈国强,安百江,鲁文豪.不同掺杂量对水热合成Zn1-xNix O稀磁半导体粉体的影响[J].人工晶体学报,2008(02):293-296.
[15] 陆佩文.无机材料科学基础[M].武汉:武汉工业大学出版社,1996
[16] 沈益斌,周勋,徐明,丁迎春,段满益,令狐荣锋,祝文军.过渡金属掺杂ZnO的电子结构和光学性质[J].物理学报,2007(06):3440-3445.
[17] YOJI IMAI;AKIO WATANABE .Comparison of electronic structures of doped ZnO by various impurity elements calculated by a first-principle pseudopotential method[J].Journal of Materials Science. Materials in Electronics,2004(11):743-749.
[18] 迪安尚方久J.A.兰氏化学手册[M].北京:科学出版社,1989
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