研究了内嵌InAs量子点的异质结场效应晶体管在室温和低温下的电学特性,获得了量子点影响下器件的输出特性曲线.在室温下,通过分别测试在近红外光照和量子点充电条件下器件的I-V特性,证明了量子点通过类似纳米悬浮栅的作用,对邻近沟道的二维电子气施加影响.在低温下观察到器件漏电流出现负微分电导现象.这一现象可由2DEG和量子点之间的共振隧穿来解释.这些结果提供了一种新的操作传统场效应晶体管的方法,并有望制成新型量子点存储器.
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