利用直流磁控溅射方法,在Ar和O2的混合气氛中,采用陶瓷靶制备ITO薄膜;采用紫外-可见-红外分光光度计和四探针法研究了溅射工艺参数对ITO薄膜的光电特性的影响.实验结果表明,当靶材角度在23-25℃、O2流量在7-9sccm、溅射时间在60-90min和溅射功率在100-120W时获得可见光透过率高于90%,方阻在10-20Ω/口之间的优质ITO薄膜.
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