由于锑化物具有高电子迁移率和高电子饱和漂移速度等优越的材料性能,锑化物高电子迁移率晶体管(HEMT)微电子器件在制造新一代超高速、超低功耗电子器件和集成电路应用方面极具潜力,有很大的发展空间.本文中对锑化物HEMT的器件结构、器件结构改进、器件性能和应用等方面进行了评述,并指出了当前需要解决的关键问题及其广阔的发展前景.
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