本文针对SiGe上Al2O3/NbAlO/Al2O3三明治结构介质栈的热稳定性和电学性能进行了研究.高分辨透射电镜(HRTEM)测试表明退火后薄膜是结晶的,同步辐射X射线反射率(XRR)和X射线衍射(XRD)分析表明在薄膜中存在超晶格结构,有0.5nm的界面层存在,X射线光电子谱(XPS)表明界面层主要成分是SiOx,介质层与SiGe衬底之间的价带偏移是2.9eV.电学测试分析给出的等效栅氧厚度和介电常数分别是1.8nm和19.
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