采用周期换向脉冲电沉积法于Mo/玻璃及ITO/玻璃衬底上制备铜铟镓硒薄膜.Mo/玻璃或ITO/玻璃为工作电极,饱和甘汞(SCE)为参比电极,大面积铂片作为阳极构成三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,制备Cu-In-Ga-Se合金预制膜,随后在硒蒸气中进行硒化处理,得到了黄铜矿结构的GuInGaSe2(CIGS)薄膜.分别用SEM,XRD和UV -吸收分析了合金预制膜和CuInGaSe2薄膜的表面形貌、相组成及紫外-可见吸收特性.结果表明,周期换向脉冲电沉积法可以制备表面平整、均匀致密的Cu-In-Ga-Se合金薄膜;利用脉冲电压的占空比可以提高预制膜中的In元素的比例,且随着In含量的增加,CIGS薄膜的结晶性交好;适当延长硒化退火的时间,可以使薄膜晶粒大小均匀,减小内应力,使薄膜的光吸收率提高,以利于制备更高效率的CIGS薄膜太阳电池.
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