采用脉冲激光沉积(PLD)技术,分别在LaAlO3(LAO)、(La,Sr)(Al,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-χKχ)0.5Bi0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料.利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(Al,Ta)O3单晶衬底上生长的薄膜结晶质量最好.另外,在20°倾斜的(La,Sr)(Al,Ta)O3单晶衬底上生长的(Na1-χKχ)0.5Bi0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号.发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计.
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