采用脉冲激光溅射沉积法( PLD)制备了Cu - In - Ga双层预制膜,通过固态源硒化后热处理的方法获得了CuInl - xGaxSe2(CIGS)薄膜,研究制备预制膜的工艺参数以及热处理温度对CIGS薄膜特性的影响.采用台阶仪、SEM、EDS、XRD和紫外分光光度计研究了薄膜的厚度、表面形貌、成分、物相结构以及光学带隙.得到了制备具有较好光学性能CIGS薄膜的优化条件为:Cu、In、Ga的原子含量比为nCu/(nIn+nGa)=0.98,nGJ(nIn+nGa)=0.28,硒化温度250℃,硒化时间60min,热处理温度为550℃,在此优化条件下得到的薄膜光学带隙为1.43eV,XRD表明CIGS薄膜是单一黄铜矿薄膜.
参考文献
| [1] | Green M A .Recent development in photovoltaics[J].Journal of Solar Energy Engineering,2004,76(1-3):3-8. |
| [2] | Konagai M .Present status of thin film solar cells in Japan[J].Re-newable Energy,1996,8(1-4):410-414. |
| [3] | Gremenok VF;Zaretskaya EP;Zalesski VB;Bente K;Schmitz W;Martin RW;Moller H .Preparation of Cu(In,Ga)Se-2 thin film solar cells by two-stage selenization processes using N-2 gas[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2005(2/3):129-137. |
| [4] | ZHENG Guang-fu,YANG Hong-xing,MAN Cheuk-ho,WONG Wing-lok,An Da-wei,John BURNETT.A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology[J].半导体学报,2001(11):1357-1363. |
| [5] | 赵宗彦.X射线与物质结构[M].合肥:安徽大学出版社,2004:174-178. |
| [6] | Hanna G;Jasenek A;Rau U;Schock H W .Influence of the Ga-content on the bulk defect densities of Cu (In,Ga)Se2[J].THIN SOLID FILMS,2001,387(1-2):71-73. |
| [7] | Ramanathan K.;Hasoon FS.;Smith S.;Young DL.;Contreras MA.;Johnson PK. Pudov AO.;Sites JR. .Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells[J].The journal of physics and chemistry of solids,2003(9/10):1495-1498. |
| [8] | 刘恩科;朱秉生;罗晋升.半导体物理学[M].长沙:国防科技大学出版社,1994:258-259. |
| [9] | Tauc J;Grigorovici R;Vancu A .Optical Properties and Electronic Structure of Amorphous Germanium[J].Physical Status Solidi,1966,15(02):627-637. |
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