磨料是化学机械抛光(CMP)中重要的组成部分,是决定抛光平坦化的重要影响因素.采用两步法制备了新型的氧化硅包覆聚苯乙烯(PS)核壳型复合磨料,采用扫描电子显微镜( SEM)、透射电子显微镜(TEM),X射线能量色散谱(EDX)等对复合磨料进行了表征.结果表明所制备的复合磨料具有核壳结构,且表面光滑.随后复合磨料对比硅溶胶对铜化学机械抛光进行研究,采用原子力显微镜( AFM)观测表面的微观形貌,并测量了表面粗糙度.经过复合磨料抛光后的铜片粗糙度为0.58nm,抛光速率为40nm/min.硅溶胶抛光后的铜片的粗糙度是1.95nm,抛光速率是37nm/min.
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