随着多结太阳能电池技术的发展,追求更高效率的四结太阳能电池结构InGaP/GaAs( In-GaAs)/(新材料)/Ge受到广泛的研究.四元化合物材料Ga1-xInxAs1-yNy通过控制其组分比例,其禁带宽度可以调整为0.95ev - 1.05ev,并且可以与GaAs,Ge实现晶格匹配,是应用于新一代太阳能电池最有潜力的新材料.在本文中我们设计了新一代多结太阳能电池InGaP/GaAs/GaInAsN/Ge,并首次应用Apsys软件对其电特性进行了模拟,与传统的InGaP/GaAs/Ge结构进行对比.结果显示,该结构可以获得较高的转换效率.
参考文献
| [1] | 王懿喆,马小凤,周呈悦,曹萌.硅基纳米结构太阳电池研究新进展[J].功能材料与器件学报,2010(05):483-489. |
| [2] | Hou H Q;Reinhardt K C;Kurtz S R.Novel InGaAsN pn Junction for High Efficiency Multiple-junction Solar Cells[A].Vienna:Joint Research Centre,Inc,1998:3600. |
| [3] | G.Leibiger;V.Gottschalch;M Schubert .Optical function,photon properties,and composition of InGaAsN single layers derived from far-and near-infrared spectroscopic ellipsometry[J].Journal of Applied Physics,2001,90:5951?5958. |
| [4] | Y.-A.Chang;H -C Kuo;Y -H Chang et al.Simulation of 1300-nm In0 4Ga0 6As0 986N0 014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers[J].Optics Communications,2004,241:195?202. |
| [5] | Friedman DJ.;Kurtz SR.;Olson JM.;Geisz JF. .1-eV solar cells with GaInNAs active layer[J].Journal of Crystal Growth,1998(1/4):409-415. |
| [6] | J. F. Geisz;Sarah Kurtz;M. W. Wanlass;J. S. Ward;A. Duda;D. J. Friedman;J. M. Olson;W. E. McMahon;T. E. Moriarty;J. T. Kiehl .High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction[J].Applied physics letters,2007(2):023502-1-023502-3-0. |
| [7] | N.H.Karam;R R King;B T Cavicchi et al.Development and characterization of high-efficiency Ga0 5In0 5P/GaAs/Ge dual-and triple-junction solar cells[J].IEEE Transactions on Electron Devices,1999,46:2116?2125. |
| [8] | AN Xinxin;Carnelli Dario Albino;Denisov Alexey .Research and Development of GaInP/GaAs/Ge Multi-Junction Solar Cells[R].Grenoble:Institut National Polytechnique De Grenoble,2007. |
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