本文具体分析了体硅SCR(晶闸管)和SOI SCR的抗静电特性,利用软件Sentaurus对埋氧层3μm,顶层硅1.5μm的SOI衬底上的SCR进行了工艺和性能仿真,仿真结果达到了4.5kV的抗静电能力,符合目前人体模型的标准2KV.研究发现,注入剂量(9*13 -8*14cm-2)增加会引起触发电压减小,维持电压升高；Trench长度(0.8 -1.1μm)增加,器件触发电压几乎不变,维持电压降低；场氧化层长度(2 -4.5μm)增加,触发电压和维持电压均增加.
参考文献
| [1] | 姜凡,刘忠立.SOI集成电路的ESD保护技术研究进展[J].微电子学,2004(05):497-500,513. |
| [2] | 宋文斌,许高博,曾传滨,韩郑生.源漏硅化物扩散层分离技术对SOINMOS抗ESD的影响[J].功能材料与器件学报,2008(06):1007-1012. |
| [3] | 于宗光.CMOS集成电路的ESD设计技术[J].电子产品可靠性与环境试验,2001(02):16-21. |
| [4] | 程新红,宋朝瑞,杨文伟,俞跃辉.高性能图形化SOI功率器件的研制[J].功能材料与器件学报,2005(03):333-337. |
| [5] | Voldman S;Schulz R;Howard J et al.CMOS on SOI ESD protection networks[J].Journal of Electrostatics,1998,42(04):333-350. |
| [6] | Markus P.J. Mergens;Christian C. Russ;Koen G. Verhaege;John Armer;Phillip C. Jozwiak;Russ Mohn .High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation[J].Microelectronics and reliability,2003(7):993-1000. |
| [7] | Yan Han;Bo Song;Shurong Dong;Mingliang Li;Fei Ma;Meng Miao;Kehan Zhu .Study of current saturation behaviors in dual direction SCR for ESD applications[J].Microelectronics and reliability,2011(2):332-336. |
| [8] | V. Vashchenko;A. Concannon;M. ter Beek;P. Hopper .LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits[J].Microelectronics and reliability,2003(1):61-69. |
| [9] | Olivier Marichal;Geert Wybo;Benjamin Van Camp;Pieter Vanysacker;Bart Keppens .SCR-based ESD protection in nanometer SOI technologies[J].Microelectronics and reliability,2007(7):1060-1068. |
| [10] | Mergens;M.Marichal;O.Thijs.Advanced SCR ESD Protection Circuits for CMOS/SOI Nanotechnologies[J].PROCEEDINGS OF THE IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE,2005(21-22):481-488. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%