在(0001)蓝宝石衬底上利用金属有机化学气相沉积系统,分别生长含有p- AlGaN电子阻挡层和反对称n - AlGaN层的双蓝光波长发射的InGaN/GaN混合多量子阱发光二极管(LED).结果发现,与传统的具有p-AlGaN电子阻挡层的双蓝光波长LED相比,这种n- AlGaN层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性和减少电子溢出,并减弱双蓝光发射光谱对电流的依赖性.此外,基于这种双蓝光波长发射的芯片与YAG:Ce荧光粉封装成白光LED能实现高显色性的白光发射,在20 mA电流驱动下,6500 K色温时显色指数达到91,而基于单蓝光芯片的白光LED显色指数只有75.
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