重离子在半导体器件中引起的单粒子效应

原子核物理评论 , 2000, 17(3): 165-170. doi: 10.3969/j.issn.1007-4627.2000.03.008

重离子在半导体器件中引起的单粒子效应

侯明东 ^1, , 甄红楼 ^2, , 张庆祥 ^3, , 刘杰 ^4, , 马峰 ^5,

1.中国科学院近代物理研究所,甘肃,兰州,730000

2.中国科学院近代物理研究所,甘肃,兰州,730000

3.中国科学院近代物理研究所,甘肃,兰州,730000

4.中国科学院近代物理研究所,甘肃,兰州,730000

5.中国科学院近代物理研究所,甘肃,兰州,730000

基金项目: 中国科学院重点项目(KJ952-S1-423) 中国科学院资助项目(19775058)

关键词：单粒子效应 , 辐射损伤 , 软错误 , 加速器模拟

Single Event Effects Induced by Heavy Ion in Semiconductor Device

重离子引起的单粒子效应是威胁航天器安全的重要因素之一,利用加速器进行地面模拟是研究单粒子效应的重要手段. 概述了单粒子效应研究的历史和现状,讨论了单粒子效应研究的基本方法,最后简要介绍了在兰州重离子加速器上已开展的单粒子效应研究工作.

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重离子在半导体器件中引起的单粒子效应

Single Event Effects Induced by Heavy Ion in Semiconductor Device

参考文献