在入射电子能量2 500 eV下测量了He的1 1S→2 1S, 2 1P, 3 1S和3 1P的微分散射截面和广义振子强度, 并与前人的实验和理论结果进行了比较, 认为在此入射电子能量下一阶Born近似对此4个跃迁成立.
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