首先简述了He离子注入单晶Si引起的气泡形成、生长以及其它缺陷对其生长的影响, 介绍了Si中He气泡生长的可能微观机制以及它们在现代半导体技术中潜在的应用前景, 提出了该领域研究有待解决的关键问题.
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