利用MCNPx程序计算了宽能谱中子雷姆仪的响应曲线. 计算表明, 增加铅层对低能中子的响应没有明显的影响, 但在高能区(几百MeV以上)宽能谱中子雷姆仪的响应与铅层的厚度有关. 铅层厚度为0.6 cm时响应比普通雷姆仪提高约3倍, 当铅层厚度增加到1.2 cm时响应高约5倍. 虽然计算结果与ICRP建议书中的H*(10)曲线相比还有一定的差别, 但改变慢化体的结构对提高高能中子的探测效率是有明显效果的.
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