测量了Ti,Ni,Cu,Al以及Si的符合多普勒展宽谱.对于Ni的多普勒展宽谱,采用最小二乘法拟合得出其中的源强度.给出了源修正前后湮没量子在Si中的多普勒展宽谱,讨论了源成分的影响.用高斯-抛物线模型拟合多普勒展宽谱,将多普勒展宽谱中自由电子的湮没贡献和束缚电子的湮没贡献分开,进而探讨了只对束缚电子的湮没贡献做源修正的方法.
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