遗传算法在单电子器件I-V特性的半经典拟合中的应用

量子电子学报 , 2000, 17(1): 75-80. doi: 10.3969/j.issn.1007-5461.2000.01.015

遗传算法在单电子器件I-V特性的半经典拟合中的应用

何红波 ^1, , 周继承 ^2, , 胡慧芳 ^3, , 李义兵 ^4,

1.长沙铁道学院材料研究所长沙 410075

2.长沙铁道学院材料研究所长沙 410075

3.长沙铁道学院材料研究所长沙 410075

4.长沙铁道学院材料研究所长沙 410075

基金项目: 国家自然科学基金(69890227,69971007) 教育部霍英东教育基金

关键词：单电子器件 , 主方程 , 遗传算法

The Semiclassical Fitting of the I-V Property of SET using Genetic Algorithm

Keywords： single electron transistor , master equation , genetic algorithm

本文在单电子器件半经典的双隧道结模型的基础上,采用遗传算法通过对主方程的数值求解,对Au纳米粒子组装体系的库仑台阶现象进行了拟合。我们发现该算法的拟合结果效果很好。

In this paper, the numerical simulation of master equation based on the DBTJ (Double Barrier Tunneling Junctions) of SET ( Single Election Transistor) using genetic algorithm are discussed. The numerical fittings are done for the Coulomb staircase of nanoscale particle self-assembly system. We find genetic algorithms are good for the fitting.

参考文献

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