有限深球方势阱研究Au纳米粒子自组装体系的I-V特性

量子电子学报 , 2000, 17(6): 562-567. doi: 10.3969/j.issn.1007-5461.2000.06.014

有限深球方势阱研究Au纳米粒子自组装体系的I-V特性

何红波 ^1, , 周继承 ^2, , 胡慧芳 ^3, , 李义兵 ^4,

1.长沙铁道学院信息学院材料研究所长沙 410075

2.长沙铁道学院信息学院材料研究所长沙 410075

3.长沙铁道学院信息学院材料研究所长沙 410075

4.长沙铁道学院信息学院材料研究所长沙 410075

基金项目: 教育部霍英东教育基金国家自然科学基金(69771011，69890227)

关键词：转移哈密顿法 , 跃迁几率 , 主方程

Simulation of I-V Property of Au Nanoparticle Self-assembly System Using Finite Well Potential

Keywords： transfer Hamiltonian , hopping rate , master equation

本文在量子点的球方阱模型基础上，利用转移哈密顿法计算了纳米粒子自组装体系电子的跃迁几率．在此基础上，通过求解电子跃迁的主方程即可得到该体系的隧穿电流与偏压的关系．

In this paper, the hopping rates of electrons in nanoparticle self-assembly system are computed using transfer Hamiltonian based on the finite well potential model of quantum dots. Then the relation between tunneling current and bias voltage is gotten by the solution of the master equation of electron hopping.

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