LP-MOCVD生长 InGaA1P外延层In组分控制的动力学分析

量子电子学报 , 2001, 18(2): 175-178. doi: 10.3969/j.issn.1007-5461.2001.02.017

LP-MOCVD生长 InGaA1P外延层In组分控制的动力学分析

文尚胜 ^1, , 范广涵 ^2, , 廖常俊 ^3, , 刘颂豪 ^4,

1.华南理工大学应用物理系；华南师范大学MOCVD实验室,

2.华南师范大学MOCVD实验室,

3.华南师范大学MOCVD实验室,

4.华南师范大学MOCVD实验室,

关键词：低压有机金属化学气相外延 , InGaAlP , 动压力 , In组分

Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

本文分析了低压转盘MOCVD生长室中气流的流动特征，首次提出了在高温(700℃左右)下生长InGaAlP外延层时，抑制In组分脱吸附的"动压力模型".解释了托盘转速和生长压力等生长参数对In组分控制的影响.

The dynamical characteristics of the gas flow in Turbo-Disk LP-MOCVD chamber is analysed. The dynamical pressure model of suppressing In desorption during InGaAlP epitaxial layer grown by LP-MOCVD at high growth temperature around 700 ℃ is presented. The effects of the growth parameters such as the disk speed and the reaction pressure on In composition in InGaAlP epitaxial layers are explained based on our model.

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