将Sn粉末和C60粉末共同蒸发获得碱土族金属掺杂的C60薄膜样品,与未掺杂的纯C60样品一起进行扫描电镜、紫外可见吸收光谱和电阻随温度变化特性的测量,分析比较掺杂对薄膜样品的组成、结构和性质的影响.结果显示,掺锡后组成薄膜的纳米颗粒略有增大并突出表面,使薄膜的电子发射阈值降低;掺入的Sn原子在禁带中形成杂质能级,使电子吸收跃迁由原来的直接跃迁变为间接跃迁,导电性也由原来的绝缘体变为N型半导体.
参考文献
| [1] | Skumanich A. Optical absorption spectra of carbon 60 thin films from 0.4 to 6.2 eV [J]. Chem. Phys. Lett, 1991, 182:486 |
| [2] | 谢希德,叶令从"布基球"到"布基管"和"布基洋葱"[J].物理(Physics),1994,23:7 |
| [3] | Hebard A F, Rosseinsky M J, Haddon R C et al. Superconductivity at 18K in potassium-doped C6o [J]. Nature, 1991,350:600 |
| [4] | Rosseinsky M J, Ramirez A P, Glarum S H et al. Superconductivity at 28K in RbxC60 [J]. Phys. Rev. Lett., 1991,66:2830 |
| [5] | Holczer K, Klein O, Huang S M et al. Alkali-fulleride Superconductors: Synthesis, Composition, and Diamagnetic Shielding [J]. Science, 1991, 252:1154 |
| [6] | Hisashi Sekine, Hiroshi Maeda, Michio Kosug et al. Magnetic behavior and structure of the halogn-doped fullerene C60 [J]. J. Appl, Phy., 1992, 72:5448 |
| [7] | Zenner Th, Zabel H. Synthesis, Characterization, and Stability of C6oI2 [J]. J. Phys. Chem., 1993, 97:8690 |
| [8] | Song L W, Fredett K T, Chung D D L et al. Superconductivity in interhalogen-doped fullerene [J]. Solid state Commun., 1993, 87:387 |
| [9] | Miyamoto Y, Oshiyama A, Saito S. Halogen doping in solid C60 [J]. Solid state Commun., 1992, 82:437 |
| [10] | Chen Jun, Wei Aixiang, Zhang Haiyan et al. Low field induced electrical emission thenomenon observed from the carbon containing thin film [J]. Chin. Phys. Lett., 1997, 14:949 |
| [11] | Kelly M K, Etchegoin P, Fuchs D. Optical transitions of C60 films in the visible and ultraviolet from spectroscopic ellipsometry [J]. Physical Review B, 1992, 46(8): 4963 |
| [12] | Pankove J I. Optical Processes in Semiconductors [M]. New york: Dover Publications Inc., 1975. Chapter 6 |
| [13] | Ke N, Cheung W Y, Wong S P et al. Electrical and defect properties of Sn-doped C60 thin film [J]. Carbon, 1997,6:759-762 |
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