应用铁电系统关联函数理论,讨论了有限大小铁电薄膜材料极化反转过程中的反转体积比和反转电流,并将结论用于KNO3铁电薄膜反转电流实验数据的拟合.拟合结果表明,考虑薄膜尺寸及厚度影响的结果优于将铁电体视为无限大的KA理论的结果.
参考文献
| [1] | 仲维烈.铁电体物理学[M].北京:科学出版社,1996. |
| [2] | 舒庆,孙彤,孙平.铁电材料的开关电流测试系统[J].电子器件,1999,22(4):240-245 |
| [3] | 曾亦可等.铁电薄膜开关特性测量[J].华中理工大学学报,1999,27(6):10-12 |
| [4] | Orihara H, Ishibashi Y. A statistical theory of nucleation and growth in finite systems [J]. J. Phys. Soc. Japan,1992, 61(6): 1919-1925 |
| [5] | Ishibashi Y, Orihara H. Size effect in ferroelectric switching [J]. J. Phys. Soc. Japan, 1992, 61(12): 4650-4656 |
| [6] | Peuzin J C. Comment on domain inverse effects in Tr-LiNbO3 integrated optical device [J]. Appl. Phys. Lett.,1986, 148:1104-1108 |
| [7] | Kugel V D, Rosenman G. Domain inversion in heat-treated LiNbO3 crystal [J]. Appl. Phys. Lett., 1993, 62(23):2902-2907 |
| [8] | Dimmler K et al. Switching kinetics in KNOa ferroelectric thin-film memories [J]. J. Appl. Phys., 1987, 61(12):5467-5470 |
| [9] | Orihara H et al. Pattern evolution in polarization reversal of ferroelectric liquid crystal [J]. J. Phys. Soc. Jpn.,1988, 57(11): 4101-4105 |
| [10] | Ishibashi Y, Takagi Y. Note on ferroelectric domain switching [J]. J. Phys. Soc. Jpn., 1971, 31(2): 506-509 |
| [11] | Hase T, Shiosaki T. Preparation and switching kinetics of Pb (Zr, Ti) Oa thin films deposited by reactive sputtering [J]. Jpn. J. Appl. Phys., 1991, 30:2159-2162 |
| [12] | Duiker H M, Beale D. Grain-size effects in ferroelectric switching [J]. Phys. Rev., 1990, B41(1): 490-495 |
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