欢迎登录材料期刊网

材料期刊网

高级检索

超高亮度GaN基蓝色LED的发展将会引起照明技术的一场革命,它是目前全球半导体领域研究和投资的热点.本文综合分析了了GaN材料的特性及相应的材料生长和欧姆接触、刻蚀工艺等关键技术,并对GaN基蓝色LED器件的进一步改进及应用前景作了展望.

参考文献

[1] Strite S, Morkoc H. GaN, AlN and InN: A review [J]. Jvac Sci Technol, 1992, B34:1237
[2] 施锦行.半导体氮化物的导电类型[J].中南矿冶学院学报,1983,(4):123Dryburgh P M. The selection of substrates for the heteroepitaxy of high-gap semiconductor [J]. Journal of Materials Science: Materials in Electronics, 1998, 9:237
[3] Nakamura S. GaN growth using GaN buffer layer [J]. J. Appl. Phys., 1991, 30(10): L1705~L1707
[4] Amano H, Sawaki N, Akasaki I. MOCVD grown of a high quality GaN film using AlN buffer layer [J]. Appl.Phys. Lett., 1986, 48:353
[5] Nakamura S, Mukai T, Seno M. High power GaN p-n junction blue LED [J]. JPN J. Phys., 1991, 30:L1998
[6] Amano H, Kito M, Hiramatsn K et al. P-type conduction in Mg-doped GaN treated with low engergy electron beam irradiation (LEEBI) [J]. JPN J. APP: Phys., 1989, 28:L2112
[7] Nakamura S, Isawa N, Seno M et al. Hole compensation mechanism of p-type GaN films. Jappl Phys., 1992, 31:12587
[8] Gobz W, Johnson N M, Walker J et al. Activation of acceptors in Mg-doped GaN grown by MOCVD [J]. Appl.Phys. Lett., 1996, 68(5): 667
[9] Sze S M. Physics of Semiconductor Devices [M]. New York: Jnhn Wiley & Sons, Inc, 1981. 245
[10] Yoshinoto N, Metsuoka T, Sasaki T et al. Photo-luminescence of InGaN grown at high temperature by MOCVD [J]. Appl. Phys. Lett., 1991, 59:2251
[11] Nakamura S. Zn-doped InGaN growth and InGaN/A1GaN double-heterostructure blue LEDs [J]. J. of Crystal Growth, 1994, 145:911
[12] 童玉珍,张国义,徐自亮等.InGaN的MOCVD生长和掺杂特性[J].光子学报,1995,34(Z3):35
[13] Tong Y Z, Li F, Zhang G Y et al. Growth and doping characteristics of InGaN films grown by LP-MOCVD [J].Solid State Commun., 1999, 109(3): 173
[14] Nakamura S, Fasol G. The Blue Laser Diodes [M]. Germany: Printed by Springer, 1997.
[15] Luther B P et al. Investigation of the mechanism for ohmic contact formation in Al and Ti/Al contacts to n-type GaN [J]. Appl. Phys. Lett., 1997, 70(1): 57
[16] Schmetz A C et al. Metal contacts to n-type GaN [J]. J Electron Mater, 1998, 27(24): 255
[17] Jang J S, Chang I S, Kim H. Low resistance pt/Ni/Au ohmic contact to p-type GaN [J]. Appl. Phys. Lett.,1999, 74(1): 70
[18] Youn D H et al. Ohmic contact to p-type GaN [J]. J. Jappl Phys., 1998, 37(4A)part1:1768
[19] Shul R J, Kilcoyne S P, Hagerott M et al. High Temperature Electron Cyclotron Resonance Etching of GaN,InN, AlN [J]. Appl Phys. Lett., 1995, 66:1761
[20] Adesida I, Ping A T, Youtseg C et al. Characteristics of chemically assistecl ion beam etching of GaN [J]. Appl.Phys. Lett., 1994, 65:889
[21] Melane G E, Casas H, Deatron S J et al. High etch rates of GaN with magnetron reactive ion etching BCl3 plasmas [J]. Appl. Phys. Lett., 1995, 66:3328
[22] Nakamura S, Mukai T, Seno M. Candela-class-high brightness InGaN/A1GaN double-heterrostructure blue LEDs [J]. Appl. Phys. Lett., 1994, 64:1687
[23] Cook J JW, Schetzina J F. Blue-green LEDs promise full-color dispays [J]. Laser Focus World, 1995, 31(3): 101
[24] Nakamara S, Senoh M, Iwasa N et al. Superbright green InGaN single quantum-well-structure LEDs [J].
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%