在有效质量近似下,考察了一个特殊量子点量子阱体系中的电子与空穴束缚态能级结构,以CdS/HgS和ZnS/CdSe构成的量子点量子阱为例进行了数值计算.结果显示,束缚态的本征能量对量子点量子阱的尺寸依赖曲线存在一些拐点,这一结果与均匀量子点体系明显不同;对某个固定的量子点量子阱结构,随量子数n的增加,CdS/HgS量子点量子阱体系中的束缚电子态的能级间隔不是单调增加的,在某些量子数n处存在峰值,而ZnS/CdSe量子点量子阱体系中的空穴束缚态的能级间隔则是单调增加的,这是由构成量子点量子阱的材料的有效质量比率不同造成的.
Under the effective mass approximation, the energy levels for the bound states of electron andhole in a quantum dot quantum well (QDQW) system are investigated. Numeral calculations on CdS/HgSand ZnS/CdSe QDQW are performed. Results reveal that the curves of the dependence of the eigen-energyon the size of the QDQW have some yielding points, which is obviously different from that in homogenousquantum dot, and the intervals of energy levels for electronic states in CdS/HgS QDQW have maximum atsome certain quantum numbers n, while those for hole states in ZnS/CdSe QDQW increase monotonously,it is due to the difference of the ratios of the effective mass of the materials synthesized the QDQW.
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