金属有机物化学气相沉积(MOCVD)方法生长应变InGaAs/GaAs量子阱,应变缓冲层结合生长中断改善量子阱的PL谱特性.用该量子阱制备的激光器有很低的阈值电流密度(43 A/cm2)和较高的斜率效率(0.34W/A,per facet).
参考文献
| [1] | Schlenker D, Miyamoto T, Chen Z, et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers [J]. J. Cryst. Growth, 2000, 209:27-36 |
| [2] | Chirlias E, Massies J, Guyaux J L, et al. An efficient way to improve compositional abruptness at the GaAs on GaInAs interface [J]. Appl. Phys. Lett., 1999, 74:3972-3974 |
| [3] | Bugge F, Beister G, Erbert G, et al. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers [J]. J. Cryst. Growth, 1994, 145:907-910 |
| [4] | Bugge F, Erbert G, et al. 12 W continuous wave diodes lasers at 1120 nm with InGaAs quantum wells [J]. Appl.Phys. Lett., 2001, 79:1965-1967 |
| [5] | Sato M, Zeimer U, et al. Evalution of strained InGaAs/GaAs quantum wells by atomic force microscopy [J]. Appl.Phys. Lett., 1997, 70:1134-1136 |
| [6] | Schlenker D, Pan Z, Miyamato T, et al. Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer [J]. Jpn. J. Appl. Phys., 1999, 38:5023-5027 |
| [7] | Schlenker D, Miyamato T, Chen Z B, et al. Critical layer thickness of 1.2 μm highly stained GaInAs/GaAs quantum wells [J]. J. Cryst. Growth, 2000, 221:503-508 |
| [8] | Nishiyama N, Arai M, Shinada S, et al. 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)Bsubstrate with high characteristic temperature (To=210 K) [J]. Jpn. J. Appl. Phys., 2000, 39:L1046-L1047 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%