采用卢瑟福背散射/沟道技术,X射线双晶衍射技术和光致发光技术对几个以MOCVD技术生长的蓝带发光差异明显的未掺杂GaN外延膜和GaN:Mg外延膜进行了测试.结果表明,未掺杂GaN薄膜中出现的2.9 eV左右的蓝带发光与薄膜的结晶品质密切相关.随未掺杂GaN的蓝带强度与带边强度之比增大,GaN的卢瑟福背散射/沟道谱最低产额增大,X射线双晶衍射峰半高宽增大.未掺杂GaN薄膜的蓝带发光与薄膜中的某种本征缺陷有关.研究还表明,未掺杂GaN中出现的蓝带与GaN:Mg外延膜中出现的2.9 eV左右的发光峰的发光机理不同.
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