研究Si/Si键合的电学性质对于界面研究和微电子器件的制备有着重要意义.分析了亲水处理方法键合的不同Si/Si键合结构的I-V特性,然后用SOS模型对n-Si/n-Si的C-V特性做了计算机辅助模拟,并和实际C-V曲线比较得出了平带电压VFB和界面态密度Din,这些结果对于键合的界面性质的了解和研究都是有意义的.
参考文献
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