提出采用壳状结构和渐变有限深势阱模型的方法来分析界面效应对半导体量子点异质结的束缚态电子能级的扰动.模拟计算表明,对于处于强受限的量子点,界面效应明显.随着量子点的表面区域增大和量子点尺寸的减小,能级移动增加,在低能级时近似呈线性变化关系.
参考文献
| [1] | Bimberg D.Quantum dots:paradigm changes in semiconductor physics [J].Semiconductors,1999,33:951-955. |
| [2] | Grundmann M,Ledentsov N N,et al.Semiconductor quantum dots for application in diode lasers [J].Thin Solid Films,1998,318:83-87. |
| [3] | Marsh J H,Bhattacharyya D,Helmy A S,et al.Engineering quantum-dot lasers [J].Physica E8,2000,154-163. |
| [4] | Guo L J,Chou S Y.Stacked quantum dot transistor and charge-induced confinement enhancement [J].Electron.Lett,1998,34(10):1030-1031. |
| [5] | Bimberg D,Grundmann M,Heinrichsdorff F,et al.Quantum dot lasers:breakthrough in optoelectronics [J].Thin Solid Films,2000,367:235-249. |
| [6] | Kazama H,Katano Y.A quantum dot FET-a future playground of quantum state manipulation [C], Device Research Conference,2001,93-94. |
| [7] | Huang C J,Zhu X P,Li C,et al.Nanofabrication of grid-patterned substrate by holographic lithography [J].J.of Crystal Growth,2002,236:141-144. |
| [8] | Chyi Jen Inn.MBE growth and characterisation of InGaAs quantum dot lasers [J].Materials Science and Engineering,2000,B75:121-125. |
| [9] | Joyce B A.Fundamental growth processes in the molecular beam epitaxy of Ⅲ-Ⅴ compounds-an historical perspective [J].Thin Solid Films,2000,367:3-5. |
| [10] | Moench W.Semiconductor Surface and Interfaces [M].Springer-Verlag,1993.30-135. |
| [11] | Scott C G,Reed C E.Surface Physics of Phosphors and Semiconductors [M].Academic Press,1975.96-219. |
| [12] | Chang L L,Ploog K.Molecular Beam Epitaxy and Heterostructures [M].Martinus Nijhoff Publishers,1985.297-328. |
| [13] | Brus L E.A simple model for the ionization potential,electron affinity,and aqueous redox potentials of small semiconductor crystallites [J].J.Chem.Phys,1983,79(11):5566-5571. |
| [14] | Kroemer H.Heterostructure devices:a device physicist looks at interfaces [J].Surface Science,1983,132:543-576. |
| [15] | Brus L.Zero-dimensional "Excitons" in semiconductor clusters [J].IEEE J.Quan.Electr,1986,22(9):1909-1914. |
| [16] | Capasso F.Compositionally graded semiconductors and their device applications [J].Ann.Rev.Mater.Sci,1986,16:263-291. |
| [17] | Lay G L,Derrien J,Boccara N.Semiconductor Interface:Formation and Properties [M].Springer-Verlag Press,1987.340-349. |
| [18] | Price P J,Stern F.Surface Science [M].1987.132:577. |
| [19] | Zhou Shixun.Quantum Mechanics (量子力学教程) [M].Beijing:HE Press,1979.64-71 (in Chinese). |
| [20] | Ghatak A K,et al.Accurate solutions to Schrodinger's equation using modified airy functions [J].IEEE J.Quan.Electron,1992,28(2):400-403. |
| [21] | Shur M.Physics of Semiconductor Devices [M].Englewood Cliffs,Prentice Hall Press,625. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%