考虑了纤锌矿结构材料的各向异性造成的内建电场的作用以及各向异性造成的应变张量和静压形变势与各向同性材料的差别.在此基础上计算了GaN/GaAIN量子阱内电子的激发态极化.研究了压力(应变)对电子激发态极化的影响.结果表明,电子势垒高度、电子有效质量和电子激发态极化均随压力线性下降,但由于内建电场的作用造成电子波函数高度局域化,上述变化的幅度不大.
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