GaN基蓝光LED高亮度化对传统照明光源带来了很大冲击.简述了GaN材料和GaN基蓝光LED器件结构的发展,阐述了为了改善LED性能的一些新措施、LED在照明光源上的应用优势,给出了白光LED的常用制备方法以及最新的研究成果.最后,提出了需要着重解决的问题.
参考文献
[1] | Liang Chunguang, Zhang Ji. GaN-dawn of 3rd-generation-semiconductors [J]. Chinese Journal of Semiconductors(半导体学报). 1992, 20(2): 89-99(in Chinese). |
[2] | Wen Shangsheng. Study and development of high brightness blue GaN-based LED [J]. Chinese Journal of Quantum Electronics(量子电子学报). 2003, 20(10)(in Chinese). |
[3] | Wang Sansheng, Gu Biao, Xu Yin et al. Growth methods and its applications in optoelectronic devices of GaN-based semiconductor materials [J]. Electron Devices,(电子器件). 2002, 25(1): 1-8(in Chinese). |
[4] | Fang Zhilie. Future applications of light emitting diodes [J]. Physics and Advanced Technology(物理学和高新技术),2003, 32(5): 295-301(in Chinese). |
[5] | Fang Zhilie. Semiconductor Lighting Materials and Devices [M]. Shanghai: Fudan University press, 1992. |
[6] | Li Jiawei, Wang Yu, Ye Zhizhen. Research advances in GaN-based QW devices [J]. Semiconductor Information(半导体情报). 2001, 38(6): 13-17(in Chinese). |
[7] | Qi Yun, Dai Ying, Li Anyi. Enhancement of the external quantum efficiency of light-emitting-diodes [J]. Electronic Components and Materials(电子元件与材料), 2003, 22(4): 43-45(in Chinese). |
[8] | Song Xianjie, Tu Qifei, Zhou Wei et al. Prospect of the application for high brightness LED in lighting area [J].Semiconductor Optoelectronics(半导体光电), 2002, 23(5): 356-360(in Chinese). |
[9] | Wang Erzhen, Wang Chunfeng. Development and application of white LED [J]. Electro-Optics Technology(光电技术). 2002, 43(1): 1-9(in Chinese). |
[10] | Li Zhonghui, Ding Xiaomin, Yang Zhijian et al. Characteristics of high brightness InGaN-based white light emitting diodes [J]. J. Infrared Millim. Waves(红外与毫米波学报), 2002, 21(5): 390-392(in Chinese). |
[11] | Wang Yufang, Yang Zhijian, Ding Xiaomin et al. The fabrication of white LED using InGaN blue LED and YAG fluorescence [J]. (高技术通讯), 2002, 12(7): 77-79(in Chinese). |
[12] | Jiang Dapeng, Zhao Chengjiu, Hou Fengqin. Fabrications and characteristics of white light-emitting diode [J].Chinese Journal of Luminescence(发光学报), 2003, 24(4): 385-389(in Chinese). |
[13] | Mukai T. Recent progress in group-Ⅲ nitride light-emitting diodes [J]. IEEE J. Select. Topics Quantum Electron.,2002, 8(2): 264-270. |
[14] | Koike M, Shibata N, Kato H, et al. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 271-277. |
[15] | Lai Weichih, Chang Shooujinn, Meiso Yokoyam, et al. InGaN-AlInGaN multiquantum-well LEDs [J]. IEEE Photon. Technol. Lett. 2001, 13(6): 559-561. |
[16] | Sheu J K, Chi G C, Jou M J. Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer [J]. IEEE Photon. Technol.Lett. 2001,13(11):1164-1166. |
[17] | Jeon Seongran, Cho Myongsoo, Yu Mina, et al. GaN-based light-emitting diodes using tunnel junctions [J]. IEEE J. Select. Topics Quantum Electron., 8(4): 739-743. |
[18] | Lee Chiaming, Chuo Changcheng, Chen Iling, et al. High-brightness inverted InGaN-GaN multiple-quantumwell light-emitting diodes without a transparent conductive layer [J]. IEEE Electron. Device Lett. 2003, 24(3):156-158. |
[19] | Subramanian Muthu, Schuurmans F J, Pashley M D. Red, green, and blue LED based white light generation:Issues and control [C]∥Industry Applications Conference, 2002. 37th IAS Annual Meeting, 2002, 13-18. |
[20] | Regina M M, Mueller G O, Krames M R, et al. High-power phosphor-converted light-emitting diodes based on Ⅲ-Nitrides [J]. IEEE J. Select. Topics Quantum Electron., 2002, 8(2): 339-345. |
[21] | Chen C H, Chang S J, Su Y K, et al. Nitride-based cascade near white light-emitting diodes [J]. IEEE Photon.Technol. Lett. 2002, 14(7): 908-910. |
[22] | Sheu J K, Pan C J, Chi G C, et al. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer [J]. IEEE Photon. Technol. Lett. 2002, 14(4): 450-452. |
[23] | Nishida T, Ban T, Kobayashi N. High-color-rending light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors [J]. Appl. Phy. Lett., 2003, 82(22): 3817-3819. |
[24] | Nakamura S. Ⅲ-Ⅴ nitride-based LEDs and lasers: current status and future opportunities [C]∥ Electron Devices Meeting, 2000. IEDM Technical Digest. International. Dec. 2000. |
[25] | Guo Xiaoyun, Graff J, Schubert F E. Photon recycling semiconductor light emitting diode [J]. IEDM Tech. Dig.,1999: 600-605. |
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