报道了γ射线辐照对薄膜材料碲镉汞(Hg1-xCdxTe)制备的中波红外焦平面列阵探测器性能的影响.γ射线辐照的剂量依次为3×106 rad、9×106rad、2×107 rad.测量了器件在辐照前及各个剂量辐照后的I-V特性、黑体响应、噪声等性能参数.通过分析实验数据,发现器件的暗电流,噪声随辐照剂量的增加而增大,黑体响应随辐照剂量的增大而减小.其中I-V特性受辐照影响最大,黑体响应和噪声对辐照不是很敏感.这些表明随着辐照剂量的增加,器件的性能逐步衰退.
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