研究了提拉法生长的钨酸镉单晶在真空与氧气氛中退火对晶体透过率、激发发射光谱和荧光寿命等的影响,结果表明:氧退火有利于提高晶体的透过率与光产额,并在一定程度上提高了蓝光发射比例,提高了该晶体的能量分辨率,这可能是氧退火使晶体的氧空位减少,导致晶体在340～440 nm由氧空位缺陷产生的吸收减弱所致.同时,氧退火有利于缩短晶体的荧光寿命,从而提高钨酸镉的时间分辨率.
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