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采用脉冲激光沉积(PLD)技术,在(110)和(100)织构金刚石膜上成功制备出高度c-轴取向的ZnO薄膜,然后在纯氮气氛条件下对ZnO薄膜进行退火处理.作为比较,也在(100)Si上生长的ZnO薄膜进行了相同的处理.通过测量X射线衍射(XRD)谱和光致发光(PL)谱,研究了不同衬底性质和退火对薄膜结构和发光特性的影响.实验结果表明,在(100)织构金刚石上的ZnO膜具有最好的结晶质量,其半高宽只有0.2°.退火之后近紫外发光峰明显减弱的同时,绿色发光峰得到增强.这里归结为氮气退火后氧空位的增加,这点从退火后的XPS谱中可以得到进一步的确认.

参考文献

[1] Yamamoto T,Shiosaki T,et al.Characterization of ZnO piezoelectric films prepared by rf planar-magnetron sputtering[J].J.Appl.Phys.,1980,51:3113-3120.
[2] Wang Y Z,et al.Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD[J].Appl.Surf.Sci.,2006,253:1745-1747.
[3] Liu Yansong,et al.Pulsed laser depostion Zinc Oxide films for surface acoustic wave applications[J].Journal of Functional Materials (功能材料),2001,32:78-90 (in Chinese).
[4] Hachigo A,et al.Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering[3].Appl.Phys.Left.,1994,65:2556-2558.
[5] Seo S H,Shin W C,et al.A novel method of fabricating ZnO/diamond/Si multilayers for surface acoustic wave (SAW) device applications[J].Thin Solid Film,2002,416 (1-2):190-196.
[6] Lamara T,Belmahi M,et al.Freestanding CVD diamond elaborated by pulsed-microwave-plasma for ZnO/diamond SAW devices[J].Diamond & Related Materials,2004,13 (4-8):581-584.
[7] Wang C X,Yang G W,et al.Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film[J].Diamond Related Materials,2003,12:1548-1552.
[8] Wang C X,Yang G W,et al.Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction[J].Carbon,2004,42:317-321.
[9] Wang C X,Gao C X,et al.Preparation and transparent property of the n-ZnO/p-Diamond heterostructure[J].Chin.Phys.Lett.,2003,20(1):127-129.
[10] Zhao B J,Yang H J,et al.Preparation and optimization of ZnO films on single-crystal diamond suhstrate by metal-organic chemical vapor deposition[J].Semicond.Sci.Technol,2004,19:770-773.
[11] Wang X Q,Du G T,et al.Two-step growth of ZnO thin films on diamond/Si by low-pressure metal-organic chemical vapor deposition[J].J.Phys.D:Appl.Phys.,2002,35:L74-L76.
[12] Sun J,Bai Y Z,et al.Deposition of ZnO films on freestanding CVD thick diamond films[J].Chin.Phys.Lett.,2006,23(5):1321-1323.
[13] Dong Weiei,Tao Ruhua,et al.Recent advances on ZnO-based films synthesized by pulsed laser deposition[J].Chinese Journal of Quantum Electronics (量子电子学报),2006,23(1):1-9 (in Chinese).
[14] Wild C,Herres N,et al.Texture formation in polycrystalline diamond films[J].J.Appl.Phys.,1990,68:973-978.
[15] Liao Y,Yu Q X,et al.Study of epitaxial growth of diamond film on hetero-material substrate[J].Modern Phys.Lett.B,2005,19 (22):1087-1093.
[16] Ye H T,Sun C Q,et al.Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)[J].Surf.Coat.Technol.,2000,123:129-133.
[17] Zheng W,Liao Y,et al.Structure and properties of ZnO films grown on silicon substrates with low temperature buffer layers[J].Appl.Surf.Sci.,2006,253:2765-2769.
[18] Ye J D,Gu S L,et al.Raman and photoluminescence of ZnO films deposited on Si(111) using low-pressure metalorganic chemical vapor deposition[J].J.Vae.Sci.Technol.A,2003,21:979-982.
[19] Lira W T,Lee C H.Highly oriented ZnO thin films deposited on Ru/Si substrates[J].Thin Solid Films,1999,353:12-15.
[20] Vanheusden K,Warren W L,et al.Mechanisms behind green photoluminescence in ZnO phosphor powders[J].J.Appl.Phys.,1996,79:7983-7990.
[21] Oh M S,Kim S H,et al.Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition[J].Appl.Phys.Left.,2005,87:122103(1-3).
[22] Kang H S,et al.Annealing effect on the property of ultraviolet and green emissions of ZnO thin films[J].J.Appl.Phys.,2004,95:1246-1250.
[23] Cebulla R,Wendt R,et al.Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma:relationships between plasma parameters and structural and electrical film properties[J].J.Appl.Phys.,1998,83:1087-1095.
[24] Ozgur U,Alivov Y I,et al.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys.,2005,98:041301 (1-103).
[25] Yang C C,Lin C C,et al.Effect of annealing atmosphere on physical characteristics and photoluminescence properties of nitrogen-implanted ZnO thin films[J].J.Crystal Growth,2005,285:96-102.
[26] Cho S,Ma J,et al.Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn[J].Appl.Phys.Left.,1999,75:2761-2763.
[27] Li W,Mao D S,et al.Characteristics of ZnO:Zn phosphor thin films by post-deposition annealing[J].Nucl.Instru.Methods Phys.Rcs.B,2000,169:59-63.
[28] Reeber R R.Lattice parameters of ZnO from 4.2° to 296° K[J].J.Appl.Phys.,1970,41:5063-5066.
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