基于激子基,采用密度矩阵理论研究了太赫兹场作用下半导体超品格的子带间动力学过程及光吸收谱.在太赫兹场的驱动下,激子作布洛赫振荡.子带间极化的缓慢变化依赖于太赫兹频率,随着太赫兹频率的增加,子带间极化向下振荡,极化强度降低.以In0.52Al0.48As/InAs和Ga0.7Al0.3As/GaAs两种超晶格为例进行研究,它们的光吸收谱出现了卫星峰结构,这是由于太赫兹场与万尼尔斯塔克阶梯激子作用的非线性效应产生的.但是就In0.52Al0.48As/InAs与Ga0.7Al0.3As/GaAs超晶格相比而言,研究发现, n<0的激子态与n=0的激子态耦合作用较强,使得光吸收谱吻合性较好, n=0时的激子态吸收光谱出现红移, n>0的激子态光吸收谱中出现的边带效应不是很明显.
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